mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES
Recently imlemented writing support has shown that current num of
retries is too low. Writing requires longer waiting than simple reading.
Signed-off-by: Rafał Miłecki <zajec5@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
diff --git a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c
index 86c9a79..595de40 100644
--- a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c
+++ b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c
@@ -17,8 +17,8 @@
#include "bcm47xxnflash.h"
/* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has
- * shown 164 retries as maxiumum. */
-#define NFLASH_READY_RETRIES 1000
+ * shown ~1000 retries as maxiumum. */
+#define NFLASH_READY_RETRIES 10000
#define NFLASH_SECTOR_SIZE 512