mtd: nand: erase block before marking bad
Many NAND flash systems (especially those with MLC NAND) cannot be
reliably written twice in a row. For instance, when marking a bad block,
the block may already have data written to it, and so we should attempt
to erase the block before writing a bad block marker to its OOB region.
We can ignore erase failures, since the block may be bad such that it
cannot be erased properly; we still attempt to write zeros to its spare
area.
Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 8a393f9..cd827d5 100644
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -394,6 +394,17 @@
uint8_t buf[2] = { 0, 0 };
int block, ret, i = 0;
+ if (!(chip->bbt_options & NAND_BBT_USE_FLASH)) {
+ struct erase_info einfo;
+
+ /* Attempt erase before marking OOB */
+ memset(&einfo, 0, sizeof(einfo));
+ einfo.mtd = mtd;
+ einfo.addr = ofs;
+ einfo.len = 1 << chip->phys_erase_shift;
+ nand_erase_nand(mtd, &einfo, 0);
+ }
+
if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
ofs += mtd->erasesize - mtd->writesize;